View 2sk1382 datasheet:

2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSIII) 2SK1382 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 15 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 47 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 100 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 k?) VDGR 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 60 Drain current A Pulse (Note 1) IDP 240 Drain power dissipation (Tc = 25°C) PD 200 W JEDEC ? Channel temperature Tch 150 °C Storage temperature range Ts