View 2sk1834 datasheet:

Power F-MOS FETs 2SK1834 2SK1834 Silicon N-Channel Power F-MOS Unit : mm Features 10.0± 0.2 4.2± 0.2 Avalanche energy capability guaranteed : EAS > 15mJ 5.5± 0.2 2.7± 0.2 VGSS=±30V guaranteed High-speed switching : tf = 25ns o3.1± 0.1 No secondary breakdown Applications 1.3± 0.2 1.4± 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8± 0.1 Motor drive Control equipment 2.54± 0.25 Switching mode regulator 5.08± 0.5 1 2 3 Absolute Maximum Ratings (Tc = 25?C) 1 : Gate Parameter Symbol Rating Unit 2 : Drain 3 : Source Drain-Source breakdown voltage VDSS 800 V TO-220 Full Pack Package (a) Gate-Source voltage VGSS ±30 V DC ID ±2 A Drain current Pulse IDP ±4 A Avalanche energy capability EAS * 15 mJ TC= 25?C 40 Allowable power PD W dissipation Ta=