View 2sk2210 datasheet:

Power F-MOS FETs 2SK2210 2SK2210 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6± 0.2 9.9± 0.3 2.9± 0.2 High-speed switching o3.2± 0.1 Low ON-resistance No secondary breakdown 2.6± 0.1 Applications 1.2± 0.15 1.45± 0.15 0.7± 0.1 Non-contact relay 0.75± 0.1 Solenoid drive 2.54± 0.2 Motor drive 5.08± 0.4 Control equipment 1 2 3 7? Switching mode regulator 1 : Gate 2 : Drain Absolute Maximum Ratings (Tc = 25?C) 3 : Source TO-220E Package Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 750 V Gate-Source voltage VGSS ±30 V DC ID ±4 A Drain current Pulse IDP ±8 A Avalanche energy capability EAS * 40 mJ TC= 25?C 50 Allowable power PD W dissipation Ta= 25?C 2 Channel temperature Tch 150 ?C Sto