View 2sk2211 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Silicon MOS FETs (Small Signal) 2SK2211 2SK2211 Silicon N-Channel MOS Unit : mm For switching 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low ON-resistance RDS(on) 45? High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4± 0.08 0.4± 0.04 0.5± 0.08 magazine packing are available. 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta = 25?C) 1 : Gate marking 2 : Drain Parameter Symbol Rating Unit 3 : Source Drain-Source voltage VDS 30 V EIAJ : SC-62 Mini-Power Type Package (3-pin) Gate-Source voltage VGSO ±20 V Drain current ID ±1 A Internal Connection Max drain current IPD ±2 A D Allowable power dissipation PD * 1 W G Channel temperature Tch 150 ?C Storage temperature Tstg – 55 to +150 ?C S * PC board : Copper foil a
Keywords
2sk2211 Datasheet, Design, MOSFET, Power
2sk2211 RoHS, Compliant, Service, Triacs, Semiconductor
2sk2211 Database, Innovation, IC, Electricity
