View 2sk2218 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Amateur radio equipment. 2125 · UHF amplifiers, MIX, OSC, analog switches. [2SK2218] · Large | yfs |. 4.5 · Small Ciss. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Source 2 : Gate 0.75 3 : Drain SANYO : PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS –15 V Gate Current IG 10 mA Drain Current ID 100 mA 400 mW Allowable Power Dissipation PD Mounted on ceramic board (250mm2? 0.8mm) 800 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 ?C
Keywords
2sk2218 Datasheet, Design, MOSFET, Power
2sk2218 RoHS, Compliant, Service, Triacs, Semiconductor
2sk2218 Database, Innovation, IC, Electricity
