View 2sk222 datasheet:

Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions · Ultralow noise figure. unit:mm · Large ? yfs? . 2019B · Low gate leakage current. [2SK222] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 SANYO : NP JEDEC : TO-92 1.3 1.3 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGDS –40 V Gate Current IG 10 mA Allowable Power Dissipation PD 300 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg –40 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Vol