View 2sk223 datasheet:

Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions · Ultrahigh withstand voltage (VGDS? –80V). unit:mm · Due to low gate leakage currents even at high 2019B voltage, the 2SK223 is suitable for a wide range of [2SK223] application (IGDL=1nA/VDS=50V, ID=1mA). 5.0 4.0 4.0 · High ? yfs? (? yfs? =20mS/VDS=30V, f=1kHz). 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 SANYO : NP JEDEC : TO-92 1.3 1.3 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 80 V Gate-to-Drain Voltage VGDS –80 V Gate Current IG 10 mA Allowable Power Dissipation PD 400 mW Junction Temperature Tj 125 ?C Storage Temperature