View 2sk2260 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:ENN4753 N-Channel Silicon MOSFET 2SK2260 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2062A · Low-voltage drive. [2SK2260] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 1.2 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% 4.8 A Tc=25° C 3.5 W Allowable Power Dissipation PD Mounted on ceramic board (250mm2? 0.8mm) 1.5 W ?C Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics
Keywords
2sk2260 Datasheet, Design, MOSFET, Power
2sk2260 RoHS, Compliant, Service, Triacs, Semiconductor
2sk2260 Database, Innovation, IC, Electricity
