View 2sk2276 datasheet:

Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS Unit : mm For switching 6.5± 0.1 5.3± 0.1 4.35± 0.1 Features 3.0± 0.1 Low ON-resistance RDS(on) High-speed switching 1.0± 0.1 0.85± 0.1 0.75± 0.1 0.5± 0.1 4.6± 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25?C) Parameter Symbol Rating Unit 1 : Gate 1 2 3 2 : Drain Drain-Source breakdown voltage VDSS 60 V Marking 3 : Source Gate-Source voltage VGSS ±20 V EIAJ : SC-63 Drain current ID ±3 A U Type Package Max drain current IDP *1 ±5 A Internal Connection Allowable power dissipation Chan- PD *2 10 W D nel temperature Tch 150 ?C G Storage temperature Tstg –55 to +150 ?C * 1 t ? 300µs , Duty Cycle < 10% * 2 TC= 25?C S Electrical Characteristics (Tc = 25?C) Parameter Symbol Condition Min Typ Max Unit