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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2277

Silicon MOS FETs (Small Signal) 2SK2277 2SK2277 Silicon N-Channel MOS Unit : mm For switching 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low ON-resistance RDS(on) 45? High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4± 0.08 0.4± 0.04 0.5± 0.08 magazine packing are available. 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 1 : Gate marking 2 : Drain Drain-Source breakdown voltage VDS 60 V 3 : Source Gate-Source voltage VGSO ± 20 V EIAJ : SC-62 Drain current ID ±1 A Mini-Power Type Package (3-pin) Max drain current IPD ± 2 A Internal Connection Allowable power dissipation PD * 1 W D Channel temperature Tch 150 ?C G Storage temperature Tstg – 55 to +150 ?C * PC board : Coppe

Keywords

 2sk2277 Datasheet, Design, MOSFET, Power

 2sk2277 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2277 Database, Innovation, IC, Electricity

 

 
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