View 2sk2380 datasheet:

Silicon Junction FETs (Small Signal) 2SK2380 2SK2380 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency 1.6± 0.15 For infrared sensor 0.4 0.8± 0.1 0.4 Features 1 Low gate-source leakage current, IGSS 3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25?C) 0.2± 0.1 Parameter Symbol Rating Unit Gate-Drain voltage VGDO – 40 V 1 : Source Gate-Source voltage VGSO – 40 V 2 : Drain EIAJ : SC-75A Drain current ID ±1 mA 3 : Gate SS-Mini Type Package (3-pin) Gate current IG 10 mA Allowable power dissipation PD 125 mW Channel temperature Tch 125 ?C Storage temperature Tstg – 55 to +125 ?C Electrical Characteristi