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2sk2382

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 ? (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k?) VDGR 200 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 15 A Drain current Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25°C) PD 45 W JEDEC ? Single pulse avalanche energy EAS 166 mJ JEITA SC-67 (Note 2) TOSHIBA 2-10R1

Keywords

 2sk2382 Datasheet, Design, MOSFET, Power

 2sk2382 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2382 Database, Innovation, IC, Electricity

 

 
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