View 2sk2383 datasheet:

Power F-MOS FETs 2SK2383 2SK2383 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5± 0.5 3.0± 0.3 o3.2± 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0± 0.2 1.1± 0.1 Non-contact relay 0.7± 0.1 Solenoid drive 5.45± 0.3 5.45± 0.3 Motor drive 5? Control equipment Switching mode regulator 1 2 3 1 : Gate 2 : Drain Absolute Maximum Ratings (Tc = 25?C) 3 : Source TOP-3E Package Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 500 V Gate-Source voltage VGSS ±30 V DC ID ±13 A Drain current Pulse IDP ±26 A Avalanche energy capability EAS * 170 mJ TC= 25?C 100 Allowable power PD W dissipation Ta= 25?C 3 Channel temperature Tch 150 ?C Storage t