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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2398

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2398 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 22 m? (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 45 A Drain current Pulse (Note 1) IDP 180 A 1. GATE Drain power dissipation (Tc = 25°C) PD 100 W 2. DRAIN (HEAT SINK) Single pulse avalanche energy EAS 246 mJ 3. SOURCE (Note 2) Avalanche curr

Keywords

 2sk2398 Datasheet, Design, MOSFET, Power

 2sk2398 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2398 Database, Innovation, IC, Electricity

 

 
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