View 2sk2399 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SK2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2399 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.17 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 100 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 k?) VDGR 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 5 A Drain current Pulse (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 20 W JEDEC ? Single pulse avalanche energy EAS 180 mJ (Note 2) JE
Keywords
2sk2399 Datasheet, Design, MOSFET, Power
2sk2399 RoHS, Compliant, Service, Triacs, Semiconductor
2sk2399 Database, Innovation, IC, Electricity
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