View 2sk246 datasheet:

2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Unit: mm Converter and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = -50 V • High input impedance: I = -1 nA (max) (V = -30 V) GSS GS Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -50 V Gate current IG 10 mA Drain power dissipation PD 300 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = -30 V, VDS = 0 ? ? -1.0 nA Gate-drain breakdo