View 2sk2495 datasheet:

Power F-MOS FETs 2SK2495 2SK2495 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 3.4± 0.3 8.5± 0.2 6.0± 0.5 1.0± 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching (switching mode regulator) For high-frequency power amplification 0.8± 0.1 0.5max. 2.54± 0.3 5.08± 0.5 Absolute Maximum Ratings (Tc = 25?C) 1 2 3 Parameter Symbol Unit Rating 1 : Gate Drain-Source breakdown voltage VDSS V 250 2 : Drain Gate-Source voltage VGSS V ±30 3 : Source DC ID A ±2 N Type Package Drain current Pulse IDP A ±4 Avalanche energy capability EAS * mJ 10 TC= 25?C 30 Allowable power PD W dissipation Ta= 25?C 1.3 Channel temperature Tch ?C 150 Storage temperature Tstg –55 to +150 ?