View 2sk2580 datasheet:

Power F-MOS FETs 2SK2580 2SK2580(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6± 0.2 9.9± 0.3 2.9± 0.2 High-speed switching o3.2± 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6± 0.1 1.2± 0.15 Applications 1.45± 0.15 0.7± 0.1 Non-contact relay 0.75± 0.1 Solenoid drive 2.54± 0.2 5.08± 0.4 Motor drive Control equipment 1 2 3 7? Switching mode regulator 1 : Gate 2 : Drain 3 : Source Absolute Maximum Ratings (Tc = 25?C) TO-220E Package Parameter Symbol Unit Rating Drain-Source breakdown voltage VDSS V 60 Gate-Source voltage VGSS V ±20 DC ID A ±40 Drain current Pulse IDP A ±80 Avalanche energy capability EAS * mJ 20 TC= 25?C 45 Allowable power PD W dissipation Ta= 25?