View 2sk2601 datasheet:

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2601 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.75 ? (typ.) (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 A Drain current 1. GATE Pulse (Note 1) IDP 40 A 2. DRAIN (HEAT SINK) Drain power dissipation (Tc = 25°C) PD 125 W 3. SOURCE Single pulse avalanche energy EAS 270 mJ (Note