View 2sk2606 datasheet:

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2606 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.0 ? (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 k?) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 8 A Drain current Pulse (Note 1) IDP 24 A Drain power dissipation (Tc = 25°C) PD 85 W Single pulse avalanche energy JEDEC ? EAS 883 mJ (Note 2) JEITA ? Avalanche current IAR 8 A