View 2sk2608 datasheet:

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 3.73 ? (typ.) (ON) High forward transfer admittance : |Y | 2.6 S (typ.) fs = Low leakage current : I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 3 A Drain current Pulse (Note 1) IDP 9 A Drain power dissipation (Tc = 25°C) PD 100 W Single pulse avalanche energy EAS 295 mJ (Note 2) JEDEC TO-220AB Avalanche current IAR 3 A JEITA SC-46 Repetitive ava