View 2sk2660 datasheet:

Power F-MOS FETs 2SK758 2SK2660(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features 6.5± 0.1 High-speed switching 5.3± 0.1 4.35± 0.1 High drain-source voltage (VDSS) 3.0± 0.1 Applications High-speed switching 1.0± 0.1 0.85± 0.1 0.75± 0.1 0.5± 0.1 4.6± 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25?C) 1 : Gate 1 2 3 2 : Drain Parameter Symbol Rating Unit Marking 3 : Source Drain-Source breakdown voltage VDSS 200 V EIAJ : SC-63 U Type Package Gate-Source voltage VGSS ±30 V DC A ID ±4 Drain current Pulse A IDP ±8 TC= 25?C 10 Allowable power PD W dissipation Ta= 25?C 0.75 Channel temperature ?C Tch 150 Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (Tc = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Sou