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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2746

2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.3 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 k?) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 7 A Drain current Pulse (Note 1) IDP 21 A Drain power dissipation (Tc = 25°C) PD 150 W 1. GATE 2. DRAIN (HEAT SINK) Single pulse avalanche energy EAS 673 mJ (Note 2) 3. SOURCE Avalanche c

Keywords

 2sk2746 Datasheet, Design, MOSFET, Power

 2sk2746 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2746 Database, Innovation, IC, Electricity

 

 
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