View 2sk2751 datasheet:

Silicon Junction FETs (Small Signal) 2SK2751 2SK2751 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency +0.2 2.8 –0.3 For pyro-electric sensor +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS – 40 V 0.4± 0.2 Drain current ID ±10 mA Gate current IG 2 mA 1 : Source JEDEC : TO-236 Allowable power dissipation PD 200 mW 2 : Drain EIAJ : SC-59 Channel temperature Tch 150 ?C 3 : Gate Mini Type Package (3-pin) Storage temperature Tstg – 55 to +150 ?C Type Name Symbol : HS Elect