View 2sk2772 datasheet:

Power F-MOS FETs 2SK2772 2SK2772(Tentative) Silicon N-Channel MOS Unit : mm For high-speed switching 6.5± 0.1 5.3± 0.1 4.35± 0.1 Features 3.0± 0.1 High-speed switching High drain-source voltage (VDSS) 1.0± 0.1 0.85± 0.1 0.75± 0.1 0.5± 0.1 4.6± 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25?C) 1 : Gate 1 2 3 2 : Drain Parameter Symbol Rating Unit Marking 3 : Source Drain-Source breakdown voltage VDSS 235 V EIAJ : SC-63 U Type Package Gate-Source voltage VGSS ±30 V Drain current ID ±4 A Max drain current IDP ±8 A PD 0.75 W Allowable power dissipation PD * 10 W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C * TC= 25?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off curr