View 2sk2775 datasheet:

Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2128 · 4V drive. [2SK2775] · Enables simplified fabrication, high-density mount- 8.2 ing, and miniaturization in end products due to the 7.8 6.2 0.6 surface mountable package. 3 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 1 : Gate 6.0 2 : Source 3 : Drain SANYO : ZP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 25 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% 100 A Allowable Power Dissipation PD Tc=25° C 40 W