View 2sk2823 datasheet:

2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: V = 0.5~1.0 V th • Small package Marking Equivalent Circuit JEDEC TO-236MOD Maximum Ratings (Ta = = 25°C) = = JEITA SC-59 Characteristics Symbol Rating Unit TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 100 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2003-03-27 2SK2823 Electrical Charac