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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2824

2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: V = 0.5~1.0 V th • Small package Marking Equivalent Circuit JEDEC ? Maximum Ratings (Ta = = 25°C) = = JEITA SC-70 TOSHIBA 2-2E1E Characteristics Symbol Rating Unit Weight: 0.006 g (typ.) Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 100 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2003-03-27 2SK2824 Electrical Characterist

Keywords

 2sk2824 Datasheet, Design, MOSFET, Power

 2sk2824 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2824 Database, Innovation, IC, Electricity

 

 
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