View 2sk2862 datasheet:

2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 3 A Pulse (t = 1 ms) IDP 5 A Drain current (Note 1) Pulse (t = 100 µs) JEDEC — IDP 12 A (Note 1) JEITA SC-67 Drain power dissipation (Tc = 25°C) PD 25 W TOSHIBA 2-10R1B Single pul