View 2sk2864 datasheet:

Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2128 • Enables simplified fabrication, high-density mounting, [2SK2864] and miniaturization in end products due to the surface 8.2 mountable package. 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 1 : Gate 7.8 2 : Source 10.0 6.0 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 20 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 80 A Allowable Power Dissipation PD Tc=25°C50 W Channel Temperature Tch 150 °C