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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2866

2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2866 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.54 ? (typ.) (ON) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 A Drain current Pulse (Note 1) IDP 40 A Drain power dissipation (Tc = 25°C) PD 125 W JEDEC TO-220AB Single pulse avalanche energy EAS 363 mJ (Note 2) JEITA SC-46 Avalanche

Keywords

 2sk2866 Datasheet, Design, MOSFET, Power

 2sk2866 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2866 Database, Innovation, IC, Electricity

 

 
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