View 2sk2867 datasheet:

Ordering number : ENN6617 2SK2867 N-Channel Silicon MOSFET 2SK2867 Ultrahigh-Speed Switching Applications Features Package Dimensions • Ultrahigh-speed switching. unit : mm • Low-voltage drive. 2091A [2SK2867] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1 : Gate 1.9 2.9 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS ±15 V Drain Current (DC) ID 30 mA Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 120 mA Allowable Power Dissipation PD Tc=25°C 250 mW Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Bre