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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2883

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 k?) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 3 A Drain current Pulse (Note 1) IDP 9 A Drain power dissipation (Tc = 25°C) PD 75 W Single pulse avalanche energy EAS 300 mJ (Note 2) JEDEC ? Avalanche current IAR 3 A

Keywords

 2sk2883 Datasheet, Design, MOSFET, Power

 2sk2883 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2883 Database, Innovation, IC, Electricity

 

 
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