View 2sk2911 datasheet:

Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Ultrahigh-speed switching. 2091A · 2.5V drive. [2SK2911] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 0.25 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% 1 A Allowable Power Dissipation PD 0.25 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source