View 2sk2916 datasheet:

2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?–MOSV) 2SK2916 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain–source ON resistance : RDS = 0.35 ? (typ.) (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 500 V) DSS DS Enhancement–mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 500 V Drain–gate voltage (RGS = 20 k?) VDGR 500 V Gate–source voltage VGSS ±30 V DC (Note 1) ID 14 A Drain current Pulse (Note 1) IDP 56 A Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy EAS 795 mJ (Note 2) JEDEC — Avalanche current IAR 14 A JEITA —