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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2986

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 4.5 m? (typ.) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 55 Pulse (t?10 s) 70 Drain current (Note 1) A IDP Pulse (t?1 ms) 280 (Note 1) JEDEC ? Drain power dissipation (Tc = 25°C) PD 100 W JEITA ? Single pulse avalanche energy EAS

Keywords

 2sk2986 Datasheet, Design, MOSFET, Power

 2sk2986 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2986 Database, Innovation, IC, Electricity

 

 
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