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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2987

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2987 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS = 4.5 m? (typ.) (ON) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 70 Drain current A 1. GATE Pulse (Note 1) IDP 280 2. DRAIN (HEAT SINK) Drain power dissipation (Tc = 25°C) PD 150 W 3. SOURCE Single pulse avalanche energy EAS 490 mJ (Note 2)

Keywords

 2sk2987 Datasheet, Design, MOSFET, Power

 2sk2987 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2987 Database, Innovation, IC, Electricity

 

 
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