View 2sk2996 datasheet:

2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2996 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.74 ? (typ.) (ON) High forward transfer admittance : |Y | = 6.8 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Drain current A Pulse (Note 1) IDP 30 Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy EAS 252 mJ (Note 2) JEDEC ? Avalanche current IAR 10 A JEITA SC-