View 2sk301 datasheet:

Silicon Junction FETs (Small Signal) 2SK301 2SK301 Silicon N-Channel Junction Unit : mm For low-frequency amplification 5.0± 0.2 4.0± 0.2 For switching Features Low noise, high gain High gate-drain voltage VGDO +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 Absolute Maximum Ratings (Ta = 25?C) 1 2 3 Parameter Symbol Rating Unit 1 : Drain 2 : Gate Drain-Source voltage VDSX 55 V 2.54± 0.15 3 : Source Gate-Drain voltage VGDO – 55 V JEDEC : TO-92 Gate-Source voltage VGSO – 55 V TO-92 Package EIAJ : SC-43 Drain current ID ± 30 mA Gate current IG 10 mA Allowable power dissipation PD 250 mW Junction temperature Tj 125 ?C Storage temperature Tstg – 55 to +125 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off curr