View 2sk303 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN856F N-Channel Junction Silicon FET 2SK303 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Ideal for potentiometers, analog switches, low unit:mm frequency amplifiers, constant current supplies, and 2050A impedance conversion. [2SK303] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Source 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Drain Voltage VGDS –30 V Gate Current IG 10 mA Drain Current ID 20 mA Allowable Power Dissipation PD 200 mW ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Condition
Keywords
2sk303 Datasheet, Design, MOSFET, Power
2sk303 RoHS, Compliant, Service, Triacs, Semiconductor
2sk303 Database, Innovation, IC, Electricity
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