View 2sk3119 datasheet:

Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2062A · 2.5V drive. [2SK3119] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% 8 A Tc=25?C 3.5 W Allowable Power Dissipation PD Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25