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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk3449

Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2190 • 4V drive. [2SK3449] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 : Source 1 2 3 2 : Drain 3 : Gate Specifications 2.4 4.8 SANYO : TO-126ML Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 4.8 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 19.2 A 1 W Allowable Power Dissipation PD Tc=25°C10 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit

Keywords

 2sk3449 Datasheet, Design, MOSFET, Power

 2sk3449 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk3449 Database, Innovation, IC, Electricity

 

 
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