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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk3495

Ordering number : ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2087A • 4V drive. [2SK3495] 2.5 • Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate Specifications 2.54 2.54 Absolute Maximum Ratings at Ta=25°C SANYO : NMP Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 1.2 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 4.8 A Allowable Power Dissipation PD 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit

Keywords

 2sk3495 Datasheet, Design, MOSFET, Power

 2sk3495 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk3495 Database, Innovation, IC, Electricity

 

 
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