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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk3557

Ordering number : ENN7169 2SK3557 N-Channel Junction Silicon FET 2SK3557 Low-Noise HF Amplifier Applications Preliminary Applications Package Dimensions • AM tuner RF amplifier. unit : mm • Low noise amplifier. 2050A [2SK3557] Features • Large ?yfs?. 0.4 0.16 3 • Small Ciss. • Ultrasmall-sized package permitting 2SK3557- 0 to 0.1 applied sets to be made smaller and slimer. • Ultralow noise figure. 1 0.95 0.95 2 1.9 1 : Source 2.9 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS --15 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -

Keywords

 2sk3557 Datasheet, Design, MOSFET, Power

 2sk3557 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk3557 Database, Innovation, IC, Electricity

 

 
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