View 2sk444 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN1420A N-Channel Junction Silicon FET 2SK444 Video Camera Applications Features Package Dimensions · Large? yfs?. unit:mm · Small Ciss. 2034A · Ultralow noise figure. [2SK444] · High frequency, low noise amplifier. 2.2 4.0 0.4 0.5 0.4 0.4 1 : Source 1 2 3 1.3 1.3 2 : Gate 3 : Drain SANYO : SPA 3.0 3.8nom Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 15 V Gate-to-Drain Voltage VGDS –15 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 200 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown V
Keywords
2sk444 Datasheet, Design, MOSFET, Power
2sk444 RoHS, Compliant, Service, Triacs, Semiconductor
2sk444 Database, Innovation, IC, Electricity
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