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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk932

Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions · AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. 0.4 0.16 · Large ? yfs? . 3 · Small Ciss. 0 to 0.1 · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer. 1 0.95 2 0.95 1.9 2.9 1 : Source 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS –15 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 200 mW Junction Temperature Tj 150 ?C Storage

Keywords

 2sk932 Datasheet, Design, MOSFET, Power

 2sk932 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk932 Database, Innovation, IC, Electricity

 

 
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