View 2sk937 datasheet:

Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Large ? yfs? . 2019B · Small Ciss. [2SK937] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 JEDEC : TO-92 EIAJ : SC-43 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 40 V Gate-to-Drain Voltage VGDS –40 V Gate Current IG 10 mA Drain Current ID 100 mA Allowable Power Dissipation PD 300 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-D