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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Silicon Switching Diode BAR 99 For high-speed switching Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BAR 99 JGs Q62702-A388 SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =54?C Ptot 370 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 330 K/W Junction - soldering point Rth JS ? 260 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 BAR 99 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Param
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bar99 Datasheet, Design, MOSFET, Power
bar99 RoHS, Compliant, Service, Triacs, Semiconductor
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