View bas28 datasheet:

Silicon Switching Diode Array BAS 28 For high-speed switching Electrically insulated diodes Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BAS 28 JTs Q62702-A77 SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =31?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 500 K/W Junction - soldering point Rth JS ? 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 BAS 28 Electrical Characteristics at TA = 25