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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration Package BAS 28W JTs Q62702-A3466 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 µ s IFS 4.5 A Total power dissipation, TS = 103 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ...+150 Thermal Resistance 1) Junction - ambient RthJA ? 460 K/W Junction - soldering point RthJS ? 190 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Mar-16-1998 Semiconductor Group 1 1998-11-01 BAS 28W Electr
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bas28w Datasheet, Design, MOSFET, Power
bas28w RoHS, Compliant, Service, Triacs, Semiconductor
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